求職英文: 描述與求職相關的課外活動(英文自傳)
ii. 強調和求職相關的已有知識技能或領導特質
範例
Extensive global travel for business and recreation has made me more receptive to the sometimes opposing values of different countries. Closely observing and comparing different societies, rather than making sweeping generalizations about a particular country or group of people, has allowed me to observe various management practices in different cultures.
求職英文聽力練習(369):描述學歷背景及已獲成就
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Source: 有效撰寫求職英文自傳 柯泰德
有效撰寫英文職涯經歷 柯泰德
英文自傳 柯泰德
密集課程 (柯泰德): Writing Effective Employment Application Statements(有效撰寫求職英文自傳)
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以下為研究或工作提案的基本科技論點:
(第二部分:行動)
Work objective工作目標 : 工作提案的目標 ?Methodology to achieve objective 達成目標的方法 : 你的計劃中達成目標的步驟?
Anticipated results希望的結果 : 你希望達成的結果?
Contribution to field領域的貢獻: 你的提案對相關工作領域的貢獻?
研讀以下研究提案以辦別包含的科技論點:
Based on the above, we should investigate the RSOE in II-VI
semiconductors and construct a related model. To do so,
voltage-current characteristics (VIC), voltage-capacity
characteristics (VCC) and capacity-modulated spectra for
barrier structures can be measured at various irradiation doses,
providing the preliminary experimental data. Based on that data,
the control parameters can then be derived. Following Hall
experiments to consider bulk effects, the parametric changes
can be analyzed and synthesized. As anticipated, low-dose radiation processes can be clarified in solids, improving the parameters of structures based on II-VI semiconductors. The proposed work can also elucidate low-dose radiation processes in II-VI semiconductors. Thus, applying this model to barrier structure manufacturing can allow us to accurately predict the irradiation conditions to enhance the parameters of structures based on II-VI semiconductors. The range of objects in which the RSOE is observed can be expanded. II-VI and other (Si, III-V) semiconductors can also be compared in terms of the RSOE mechanisms. Analysis of RSOE in II-VI reveals the peculiarities of related objects. In contrast with III-V semiconductors, for which the properties of “pure” crystals can be determined by impurities in II-VI semiconductors, the lattice “stoichiometric” defects prevails. Naturally, RSOE can be explained by the reconstruction of defect centers. Importantly, the proposed model can consider the effect of the radiation-stimulated diffusion (RSD) of point defects.
Source: 有效撰寫英文工作提案 柯泰德
完成以上的科技閱讀練習:
(詳細內容在教學平台)
密集課程 (柯泰德): Organizing Technical Research Papers(科技研究論文組織寫作)
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柯泰德英文論文編修訓練部落格 